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SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche ener.
• 650 V @ TJ = 150°C
• Typ.RDS(on) = 79 mΩ
• Ultra Low Gate Charge ( Typ. Qg = 139 nC )
• Low Effective Output Capacitance (Typ. Coss.eff = 340 pF)
• 100% Avalanche Tested
Description
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for .
FCH35N60 - ON Semiconductor
SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCH30A03L |
Kyocera |
Schottky Barrier Diode |
|
| 2 | FCH30A03L |
Nihon Inter Electronics |
SBD |
|
| 3 | FCH30A04 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 4 | FCH30A06 |
Kyocera |
Schottky Barrier Diode |
|
| 5 | FCH30A06 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 6 | FCH30A09 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 7 | FCH30A10 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 8 | FCH30A10 |
Kyocera |
Schottky Barrier Diode |
|
| 9 | FCH30A15 |
Kyocera |
Schottky Barrier Diode |
|
| 10 | FCH30A15 |
Nihon Inter Electronics |
SBD |
|
| 11 | FCH30B03L |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 12 | FCH30B10 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|