FCH20B10 - Nihon Inter Electronics

FCH20B10 Schottky Barrier Diode

www.DataSheet.co.kr SBD T y p e : FCH20B10 FCH20B10 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionT.

Features

*TO-220AB Case
*Fully Molded
*Dual Diodes
  – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.75g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Symbol IRM 180 20 FCH20B10 100 50 Hz Full Sine Wave Tc=105°C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.5 Conditions Min. Typ.