SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Conseque.
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 105 mW
• Ultra Low Gate Charge (Typ. Qg = 46 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 125 mW @ 10 V
ID MAX 24 A
D
G
S N-Channel MOSFET
GDS TO−247−3LD CASE 340CH
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 5
$Y&Z&3&K FCH125 N65S3R0
$Y &Z &3 &K FCH125N65S3R0
= ON Semiconductor Logo = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FCH125N60E |
ON Semiconductor |
N-Channel MOSFET | |
2 | FCH125N60E |
Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET | |
3 | FCH104N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FCH104N60 |
INCHANGE |
N-Channel MOSFET | |
5 | FCH104N60F |
Fairchild Semiconductor |
MOSFET | |
6 | FCH104N60F-F085 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FCH10A03L |
Kyocera |
Schottky Barrier Diode | |
8 | FCH10A03L |
Nihon Inter Electronics |
Schottky Barrier Diode | |
9 | FCH10A04 |
Nihon Inter Electronics |
Schottky Barrier Diode | |
10 | FCH10A045 |
Thinki Semiconductor |
Dual Common Cathode Schottky Barrier Rectifier | |
11 | FCH10A06 |
Nihon Inter Electronics Corporation |
Schottky Barrier Diode | |
12 | FCH10A06 |
Thinki Semiconductor |
Dual Common Cathode Schottky Barrier Rectifier |