FCD855C - Fairchild Semiconductor

FCD855C Optically-Coupled Darlington Isolator

The FCD850, FCD855 series of optoisolators have a silicon npn Planar Darlington phototransistor coupled to a GaAs diode. Each is mounted in a e-pin plastic dual in-line package. The FCD850/FCD850C has a minimum collector-emitter breakdown voltage of 30 V; the FCD855 I FCD855C has a minimum collectoremitter breakdown voltage of 55 V. Glassolated TII High Cur.

Features

A = 25°C Derate Linearly from 25 ° C 3.0 V eo mA 3.0 A 150 mW 1.33 mW 1°C Output Transistor (Darlington) VeE Collector-to-Emitter Voltage FCD850 FCD855 Vee Collector-to-Base Voltage FCD850 FCD855 VEe Emitter-to-Collector Voltage Ie Collector Current = Po Power Dissipation at TA 25°C Derate Linearly from 25 ° C 30V 55V 30V 55 V 7.0V 125 mA 150 mW 2.0 mW/oC Package Outline .HOrC~In '34O0l::n,_4 (1:0,4435, (8.636) I ,~'6(1.905'MAX 3 10 (1.2701 '_.012 (1.5761 DlA m-"-r- 032 .120 (813, (30481 ~ It' .150(3810) .. I 1 010( 254) +002(051) ±g~::.ci~~: -.1 L r-- ~.100(2540) L- 34~~;36)~.