FBAT54SDW - Jiangsu Changjiang Electronics

FBAT54SDW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Maximum Ratings @TA=25℃ Parameter Peak Repetitive reverse voltage DC Blocking Voltage Average Rectifie.

Features

z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Maximum Ratings @TA=25℃ Parameter Peak Repetitive reverse voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range WBFBP-06C (2×2×0.5) unit: mm 1 FBAT54SDW Marking:KL8 Symbol VRM VR IO PD TJ TSTG Limits 30 100 150 125 -65-125 Unit V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage curr.