FB4110Q - VBsemi

FB4110Q N-Channel MOSFET

FB4110Q-VB FB4110Q-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.0030 180 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIM.

Features

• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage.