FB180SA10 - International Rectifier

FB180SA10 Power MOSFET

Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low ther.

Features

0V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Max. 180 120 720 480 2.7 ± 20 700 180 48 5.7 -55 to + 150 2.5 1.3 Units A W W/°C V mJ A mJ V/ns °C kV N
•m Thermal Resistance Parameter RqJC RqCS Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ.
  –
  –
  – 0.05 Max. 0.26
  –
  –
  – Units °C/W 1 www.irf.com 2/1/99 FB180SA10 Electrical Cha.