F9020 - Fairchild Semiconductor

F9020 FJPF9020

www.DataSheet4U.com FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors • High Collector-Base Breakdown Voltage : BVCBO = -550V • High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) • Industrial Use 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unles.

Features

tter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC = - 1A, IB = - 20mA 400 -10 550 -1.0 -1.5 Min. - 550 - 550 -6 -100 -20 700 - 1.5 - 2.0 V V Typ. Max. Units V V V µA mA ©2002 Fairchild Semiconductor Corporation Rev. A, June 2002 www.DataSheet4U.com FJPF9020 Typical Characteristics -3.0 1000 VCE = - 4V -2.5 IB = - 40mA 125 C o IC [A], COLLECTOR CURRENT HFE, DC CURRENT.