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F650B-VB www.VBsemi.com F650B-VB Datasheet N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.058at VGS = 10 V ID (A) 35 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT TO-220AB APPLICATIONS • Industrial D GD S G S N.
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
TO-220AB
APPLICATIONS
• Industrial
D
GD S
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Repetitive Avalanche Energya
IAR
L = 0.1 mH
EAR
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F6501 |
IDT |
Ku-Band SATCOM Transmitter |
|
| 2 | F6502 |
IDT |
Ka-Band SATCOM Transmitter |
|
| 3 | F6503 |
IDT |
Common Data Link (CDL) TX |
|
| 4 | F6521 |
Renesas |
8-Ch Tx Active Beamforming |
|
| 5 | F65540 |
Chips & Technologies |
(F65545 / F65540) High Performance Flat Panel / CRT VGA Controller |
|
| 6 | F65545 |
Chips & Technologies |
(F65545 / F65540) High Performance Flat Panel / CRT VGA Controller |
|
| 7 | F65550 |
Asiliant Technologies |
65550 DC Drive Characteristics |
|
| 8 | F65550B |
Digital |
VL-Bus |
|
| 9 | F6584 |
Hamamatsu Corporation |
WIDE DYNAMIC RANGE MICROCHANNEL PLATES |
|
| 10 | F6584-01 |
Hamamatsu Corporation |
WIDE DYNAMIC RANGE MICROCHANNEL PLATES |
|
| 11 | F6584-09 |
Hamamatsu Corporation |
WIDE DYNAMIC RANGE MICROCHANNEL PLATES |
|
| 12 | F6589 |
Hamamatsu Corporation |
ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE |
|