F5800-VB F5800-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.049 at VGS = - 10 V - 30 0.054 at VGS = - 4.5 V ID (A)a - 4.8 - 4.1 Qg (Typ.) 5.1 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch 3 mm TSOP-6 Top V iew 1 6 2 5 3 4 .
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch
3 mm
TSOP-6 Top V iew
1
6
2
5
3
4
2.85 mm
(4) S (3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C TA = 25 °C
PD
TA = 70 °C Ope.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F5800A |
ETC |
High Precision Low - Complexity Low - Pressure LED Constant Flow | |
2 | F5800B |
ETC |
High Precision Low - Complexity Low - Pressure LED Constant Flow | |
3 | F5800C |
ETC |
High Precision Low - Complexity Low - Pressure LED Constant Flow | |
4 | F5-75R06KE3_B5 |
Infineon |
IGBT | |
5 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
6 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH | |
7 | F5019 |
CSF |
Froide | |
8 | F5033 |
Fuji Electric |
INTELLIGENT POWER MOSFET | |
9 | F50D1G41LB-50YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
10 | F50D1G41LB-50YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
11 | F50D1G41LB-66YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
12 | F50D1G41LB-66YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |