F5305S-VB www.VBsemi.com F5305S-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.048at VGS = - 10 V - 60 0.060at VGS = - 4.5 V ID (A) - 35 - 30 Qg (Typ.) 60 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
D2PAK (TO-263)
S G
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
GD S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maxim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F5-75R06KE3_B5 |
Infineon |
IGBT | |
2 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
3 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH | |
4 | F5019 |
CSF |
Froide | |
5 | F5033 |
Fuji Electric |
INTELLIGENT POWER MOSFET | |
6 | F50D1G41LB-50YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
7 | F50D1G41LB-50YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
8 | F50D1G41LB-66YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
9 | F50D1G41LB-66YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory | |
10 | F50D2G41LB-50YG2M |
ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory | |
11 | F50D2G41LB-66YG2M |
ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory | |
12 | F50D4G41XB |
ESMT |
1.8V 4-Gbit SPI-NAND Flash Memory |