TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-75R12KS4 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 65°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C Peri.
ge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = ±15 V RGon = 7,5 Ω Tvj = 25°C Tvj = .
Technische Information / technical information IGBT-Module IGBT-modules F4-75R12KS4 IGBT-Wechselrichter / IGBT-inverte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F4-75R12KS4_B11 |
Infineon |
IGBT | |
2 | F4-75R12MS4 |
Infineon |
IGBT | |
3 | F4-75R06W1E3 |
Infineon |
IGBT | |
4 | F4-75R07W1H3_B11A |
Infineon |
IGBT | |
5 | F4-100R12KS4 |
eupec |
IGBT | |
6 | F4-100R12KS4 |
Infineon |
IGBT | |
7 | F4-100R17ME4_B11 |
Infineon |
IGBT | |
8 | F4-150R12KS4 |
Infineon |
IGBT | |
9 | F4-150R17ME4_B11 |
Infineon |
IGBT | |
10 | F4-200R17N3E4 |
Infineon |
IGBT | |
11 | F4-250R17MP4_B11 |
Infineon |
IGBT | |
12 | F4-3L50R07W2H3F_B11 |
Infineon |
IGBT |