F3L500R12W3H7_H11 - Infineon

F3L500R12W3H7_H11 IGBT

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Features

• Electrical features - VCES = 1200 V - IC nom = 500 A / ICRM = 1000 A - Ultra fast IGBT chips - Low ind-ucDtievteadilessiganbout hole specification for contacts refer to AN2009-01 chapter 2 - Low sw-itcDhiinagmleotsesress of drill P1,15mm - Low VCE-,saCt opper thickness in hole 25~50um - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder
• Mechanical features - 3.2 kV AC 1 minute insulation - High current pin - PressFIT contact technology - Rugged mounting due to integrated mounting clamps - Al2O3 substrate with low thermal resistance Potential applications
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