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F2W005G - F2W10G PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10.0) .
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* Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS WOB
0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57)
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AC
1.00 (25.4) MIN.
1.10 (27.9) MIN.
0.034 (0.86) 0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per MIL-STD-202, Method 208 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F2W005G |
EIC discrete Semiconductors |
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
|
| 2 | F2W01G |
EIC discrete Semiconductors |
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
|
| 3 | F2W02G |
EIC discrete Semiconductors |
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
|
| 4 | F2W04G |
EIC discrete Semiconductors |
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
|
| 5 | F2W08G |
EIC discrete Semiconductors |
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
|
| 6 | F2W10G |
EIC discrete Semiconductors |
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
|
| 7 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 8 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 9 | F2003 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 10 | F2004 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 11 | F2012 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 12 | F2013 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|