Nch F25FH60CP PowerMOSFET ■ OUTLINE Package:FH Unit:mm 600V25A Feature SMD HighVoltage FastSwitching LowRON ϩοτ߸هʢྫʣ %BUF DPEF ཧ൪߸ʢྫʣ $POUSPM /P ໊ུ߸ 5ZQF /P 00 00 25FH60 CP ᶆ ᶃᶄᶅ ᶃ( ᶄ% ᶅ 4 ᶆ% Web。 。 Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe marking,refertothespecification"Marking,TerminalConnec.
ainCurrent IDSS VDS=600V,VGS=0V Gate-SourceLeakageCurrent IGSS VGS=±30V,VDS=0V ForwardTransconductance gfs ID=12.5A,VDS=10V StaticDrain-SourceOn-stateResistance R(DS)ON ID=12.5A,VGS=10V GateThresholdVoltage VTH ID=1mA,VDS=10V Source-DrainDiodeForwardVoltage VSD IS=12.5A,VGS=0V ThermalResistance θjc Junctiontocase TotalGateCharge Qg VDD=400V,VGS=10V,ID=25A InputCapacitance Ciss ReverseTransferCapacitance Crss VDS=100V,VGS=0V,f=1MHz OutputCapacitance Coss Turn-ondelaytime td(on) Risetime tr ID=12.5A,RL=12Ω,VDD=150V,Rg=50Ω, Turn-offdelaytime td(off) VGS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F25F60CPM |
SHINDENGEN |
Power MOSFET | |
2 | F25D08QA |
Elite Semiconductor |
8 Mbit Serial Flash Memory | |
3 | F25D64QA |
Elite Semiconductor |
64 Mbit Serial Flash Memory | |
4 | F25JZ51 |
Toshiba |
SF25JZ51 | |
5 | F25L004A |
Elite Semiconductor |
4Mbit (512Kx8) 3V Only Serial Flash Memory | |
6 | F25L008A |
Elite Semiconductor |
8Mbit (1Mx8) 3V Only Serial Flash Memory | |
7 | F25L016A |
Elite Semiconductor |
16Mbit (2Mx8) 3V Only Serial Flash Memory | |
8 | F25L01PA |
Elite Semiconductor |
3V Only 1 Mbit Serial Flash Memory | |
9 | F25L02PA-100DG |
ESMT |
3V Only 2 Mbit Serial Flash Memory | |
10 | F25L02PA-100HG |
ESMT |
3V Only 2 Mbit Serial Flash Memory | |
11 | F25L02PA-100HIG2F |
ESMT |
3V Only 2 Mbit Serial Flash Memory | |
12 | F25L02PA-100PAG |
ESMT |
3V Only 2 Mbit Serial Flash Memory |