Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1003 PATEN.
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 6 A RF CHARACTERIS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F1000LC120 |
IXYS |
Extra Fast Recovery Diode |
|
| 2 | F1001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 3 | F100122 |
National Semiconductor |
9-BIT BUFFER |
|
| 4 | F100124 |
National Semiconductor |
Hex TTL-to-ECL Translator |
|
| 5 | F100125 |
National Semiconductor |
Hex ECL-to-TTL Translator |
|
| 6 | F100136 |
National Semiconductor |
4-Stage Counter / Shift Register |
|
| 7 | F100164 |
Fairchild Semiconductor |
16 Input Multiplexer |
|
| 8 | F100164 |
National Semiconductor |
16 Input Multiplexer |
|
| 9 | F100180 |
National Semiconductor |
HIGH-SPEED 6-BIT ADDER |
|
| 10 | F100183 |
National Semiconductor |
2 X 8-BIT RECODE MULTIPLIER |
|
| 11 | F1001C |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 12 | F1002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|