This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridg.
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
ET-20N50
N-Channel MOSFET
Symbol 1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
General Description
This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ET-1102 |
RadioShack |
900 MHz Digital Spread Spectrum Cordless Telephone | |
2 | ET-34063A |
ETC |
DC to DC Converter Controller | |
3 | ET-3528 |
Edison |
1W White LED | |
4 | ET-3528A-111W |
Edison |
PLCC LED | |
5 | ET-3528B-111W |
Edison |
PLCC LED | |
6 | ET-3528B-111W |
Edison |
PLCC LED | |
7 | ET-3528R-111W |
Edison |
PLCC LED | |
8 | ET-3528T-111W |
Edison |
PLCC LED | |
9 | ET-3535 |
Edison |
1/3W LED | |
10 | ET-5050 |
Edison |
1W HR LED | |
11 | ET-5050-BB1W-D |
Edison |
PLCC LED | |
12 | ET-5050A-331W |
Edison |
PLCC LED |