ESJC13-12B 350mA 12kV --nS High Voltage Microwave Oven Rectifiers Diodes ------------------------------------------------------------------------------------------------------------------------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing struct.
1. Low VF. 2. High reliability. 3. High Surge proof resistivity. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-722B 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage power supply rectifier. 2. High voltage rectifier circuit for microwave oven. 3. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 2.90 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ESJC13 |
Fuji Electric |
HIGH VOLTEGE DIODE | |
2 | ESJC01 |
Fuji Electric |
HIGH VOLTAGE SILICON DIODE | |
3 | ESJC03 |
Fuji Electric |
High Voltage Silicon Diode | |
4 | ESJC07 |
Fuji Electric |
HIGH VOLTAGE SILICON DIODE | |
5 | ESJC30 |
Fuji Electric |
HIGH VOLTAGE SILICON DIODE | |
6 | ESJC35-08 |
Fuji Electric |
ESJC35-08 | |
7 | ESJC37 |
Fuji Electric |
HIGH VOLTAGE DIODE | |
8 | ESJC50-08 |
GETE ELECTRONICS |
8.0kV 500mA HIGH VOLTAGE DIODE | |
9 | ESJC50-15 |
GETE ELECTRONICS |
15kV 500mA HIGH VOLTAGE DIODE | |
10 | ESJC50F08 |
GETE ELECTRONICS |
500mA 8kV HIGH VOLTAGE DIODES | |
11 | ESJC50F10 |
GETE ELECTRONICS |
500mA 10kV HIGH VOLTAGE DIODES | |
12 | ESJC50F12 |
GETE ELECTRONICS |
450mA 12kV HIGH VOLTAGE DIODES |