ESDM3032 - ON Semiconductor

ESDM3032 ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2018 1 May, 2024 − Rev. 3 Publication Order Number: ESDM3032/D ESDM3032 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage .

Features

 Low Clamping Voltage
 Small Body Outline Dimensions: 0.62 mm x 0.32 mm
 Low Body Height: 0.3 mm
 Stand−off Voltage: 3.3 V
 IEC61000−4−2 Level 4 ESD Protection
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications
 mSD Card Protection
 Audio Line
 GPIO 1 2 X3DFN2 CASE 152AF MARKING DIAGRAM PIN 1 3M 3 = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† ESDM3032MXT5G X3DFN2 10000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please ref.