ESDA8V2-1J - ST Microelectronics

ESDA8V2-1J EOS and ESD Transil protection

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages. TM: Transil is a trademark of STMicroelectronics August 2009 Doc ID 15646 Rev 1 1/7 www.st.com 7 Characteristics 1 Characte.

Features

■ Breakdown voltage VBR = 8.2 V
■ Unidirectional device
■ High peak power dissipation: 500 W (8/20 µs waveform)
■ ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge
■ Low leakage current (< 0.5 µA @ 5 V) Benefits
■ High EOS and ESD protection level
■ High integration
■ Suitable for high density boards Complies with the following standards:
■ IEC 61000-4-2 level 4
  – ±15 kV (air discharge)
  – ±8 kV (contact discharge)
■ MIL STD 883G - Method 3015-7: class 3B
  – HBM (human body model): ≥8kV Applications This product is particularly recommended for the protection of pow.