ESD9R3.3S - ON Semiconductor

ESD9R3.3S ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2013 1 February, 2024 − Rev. 3 Publication Order Number: ESD9R3.3S/D ESD9R3.3S, SZESD9R3.3S ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maxi.

Features

 Ultra−Low Leakage < 1 nA
 Ultra−Low Capacitance 0.5 pF
 Low Clamping Voltage
 Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm)
 Low Body Height: 0.016 (0.4 mm)
 Stand−off Voltage: 3.3 V
 Response Time < 1.0 ns
 IEC61000−4−2 Level 4 ESD Protection
 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
 This is a Pb−Free and Halogen−Free Device Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) .