ESD9N5BU - msksemi

ESD9N5BU ESD Protector

The ESD9N5BU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operatin.

Features

lating: 7 ~ 17 um ¾ Pin flatness:≤3mil Electronics Parameter Applications ¾ Cellular phones ¾ Portable devices ¾ Digital cameras ¾ Power supplies ESD9N5BU ESD Protector Symbol VRWM IR VBR IT IPP VC PPP CJ IF VF Parameter Peak Reverse Working Voltage Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Peak Pulse Power Junction Capacitance Forward Current Forward Voltage @ IF Rev.05.3 1 I IPP VC VBR VRWM IT IR IR IT V VRWM VBR VC IPP ESD Protector ESD9N5BU Electrical characteristics per line@25℃ (unless otherw.