ESD7501 - ON Semiconductor

ESD7501 ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2015 1 May, 2024 − Rev. 2 Publication Order Number: ESD7501/D ESD7501 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Cu.

Features

 Low Capacitance 0.45 pF (Typ)
 Low Clamping Voltage
 Small Body Outline Dimensions: 0.60 mm x 0.30 mm
 Low Body Height: 0.3 mm
 Stand−off Voltage: 5 V
 IEC61000−4−2 Level 4 ESD Protection
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications
 USB 2.0/3.0
 MHL 2.0
 eSATA MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact Air 16 kV 16 Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second.