ESD7382MUT5G - ON Semiconductor

ESD7382MUT5G ESD Protection Diode

of survivability specs. © Semiconductor Components Industries, LLC, 2017 1 April, 2024 − Rev. 5 Publication Order Number: ESD7382/D ESD7382MUT5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Lea.

Features

• Ultra−Low Capacitance: 0.37 pF
• Low Clamping Voltage
• Small Body Outline Dimensions: 0.60 mm x 0.30 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 5.0 V
• Low Leakage
• Insertion Loss: 0.030 dBm
• Response Time is < 1 ns
• Low Dynamic Resistance < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications
• GPIO and Power Line Protection MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact Air ±20 kV ±20 Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, .