ESD5Z2.5T1G - ON Semiconductor

ESD5Z2.5T1G ESD Protection Diode

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Po.

Features

 Low Clamping Voltage
 Small Body Outline Dimensions: 0.047 x 0.032 (1.20 mm x 0.80 mm)
 Low Body Height: 0.028 (0.7 mm)
 Stand−off Voltage: 2.5 V − 12 V
 Peak Power up to 240 Watts @ 8 x 20 ms Pulse
 Low Leakage
 Response Time is Typically < 1 ns
 ESD Rating of Class 3 (> 16 kV) per Human Body Model
 IEC61000−4−2 Level 4 ESD Protection
 IEC61000−4−4 Level 4 EFT Protection
 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
 These Devices are Pb−Free and are RoHS Compliant
* Mechanical Charac.