ESD5B5.0S - ON Semiconductor

ESD5B5.0S ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2015 1 February, 2024 − Rev. 8 Publication Order Number: ESD5B5.0ST1/D ESD5B5.0S, SZESD5B5.0S ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Reverse Le.

Features

 Low Capacitance 32 pF
 Low Clamping Voltage
 Small Body Outline Dimensions: nom 0.063 x 0.032 (1.6x0.8 mm)
 Low Body Height: nom 0.024 (0.6 mm)
 Reverse Working (Stand−off) Voltage: 5.0 V
 Peak Power up to 50 W @ 8 x 20 ms Pulse
 Low Leakage
 Response Time is Typically < 1 ns
 ESD Rating of Class 3 (> 16 kV) per Human Body Model
 IEC61000−4−2 Level 4 ESD Protection
 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
 This is a Pb−Free Device Mechanical Characteristics CASE: Void-free, trans.