ESD24VS2U - Infineon

ESD24VS2U Silicon TVS diodes

Silicon TVS diodes • ESD / transient protection of CAN/LIN bus networks power supply lines according to: IEC61000-4-2 (ESD): ±30kV (air / contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20µs) ISO7637-2: Pulse 1 (max. 50 V), Pulse 2 (max. 125 V), Pulse 3a, b (max.800 V) • Max. working voltage: 24 V • Low capacitance: 24 pF typ. • Low .

Features

ting temperature range Top Storage temperature Tstg Value 30 5 230 -55...150 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics Reverse working voltage Breakdown voltage I(BR) = 1 mA Reverse current VR = 24 V Clamping voltage IPP = 1 A, tp = 8 / 20 µs)2) IPP = 5 A, tp = 8 / 20 µs)2) Line capacitance3) VR = 0 V, f = 1 MHz, (pins 1 to 2, pin 3 n.c.) VR = 0 V, f = 1 MHz, (pins 1 or 2 to 3) VRWM V(BR) IR VCL CT - - 24 26 - 32 - <1 10 - 30 34 - 36 41 - 24 28 - 48 52 1VESD according to IEC.