ESD0P8RFL - Infineon

ESD0P8RFL RF ESD Protection Diodes

RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 (ESD): ± 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Very low line capacitance: 0.8 pF @ 1 GHz ( 0.4 pF per diode) • Ultra low series inductance: 0.4 nH per diode • Very low clamping vol.

Features

RFL Marking E8 2011-06-27 ESD0P8RFL Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge1) Peak pulse current (tp = 8 / 20 µs)2) Operating temperature range VESD Ipp Top Storage temperature Tstg Value 20 10 -55...150 -65...150 Unit kV A °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics - Reverse working voltage3) Reverse current3) VR = 50 V Forward clamping voltage2) IPP = 10 A Line capacitance4) VR = 0 V, f = 1 GHz Series inductance (per diode) VRWM IR VFC C.