EPC1001 - EPC

EPC1001 Enhancement Mode Power Transistor

DATASHEET EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A EPC1001 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coe.

Features

BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(th) RDS(ON) Gate Threshold Voltage Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 300 µA VDS = 80 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 5 mA VGS = 5 V, ID = 25 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to Drain Charge QGS Gate to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 5.