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www.DataSheet4U.com EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. Features (3) (2) (1) • Lead−Free Solder Plating • Low VCE(SAT), t0.5 V • These are Pb−Free D.
(3)
(2)
(1)
• Lead−Free Solder Plating
• Low VCE(SAT), t0.5 V
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc
Q1
Q2
(4)
(5)
(6)
6 1
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMT1DXV6T1 |
ON Semiconductor |
Dual General Purpose Transistor |
|
| 2 | EMT1 |
Rohm |
General Purpose Transistor |
|
| 3 | EMT1 |
SeCoS |
Transistors |
|
| 4 | EMT1 |
JCET |
Dual Transistors |
|
| 5 | EMT18 |
Rohm |
General purpose transistors |
|
| 6 | EMT18 |
JCET |
Dual Transistors |
|
| 7 | EMT2 |
Rohm |
Dual Transistor |
|
| 8 | EMT2DXV6T5 |
ON Semiconductor |
Dual General Purpose Transistor |
|
| 9 | EMT3 |
Rohm |
Dual Transistor |
|
| 10 | EMT5 |
Rohm |
Dual Transistor |
|
| 11 | EMT51 |
ROHM |
General purpose transister |
|
| 12 | EMTCG128-3G |
EM Microelectronic |
128KB Flash Smart Card IC |
|