EMP85N10CS - Excelliance MOS

EMP85N10CS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 8.0mΩ 10.5mΩ ID @TC=25℃ 73.0A ID @TA=25℃ 12.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C T.

Features

mbient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 362°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/6/8 A.1 EMP85N10CS LIMITS ±20 73 46 12 10 269 28 39.2 19.6 69.4 27.8 2 1.3 -55 to 150 UNIT V A mJ W W °C MAXIMUM 1.8 62 UNIT °C/W P.1 EMP85N10CS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source.