N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 2.3mΩ ID 100A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current1 Pulsed Dr.
n a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 2.5 50 UNIT °C / W 2019/8/13 p.1 EMP21N03HR ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMP21N03HC |
Excelliance MOS |
MOSFET | |
2 | EMP210 |
Excelics Semiconductor |
9.5 - 12 GHz Power Amplifier MMIC | |
3 | EMP211 |
Excelics Semiconductor |
9.5 - 12.0 GHz Power Amplifier MMIC | |
4 | EMP212 |
Excelics Semiconductor |
9.50 - 12.0 GHz Power Amplifier MMIC | |
5 | EMP213 |
Excelics Semiconductor |
12.5 - 15.5 GHz Power Amplifier MMIC | |
6 | EMP2133 |
Elite Semiconductor |
300mA CMOS Linear Regulator | |
7 | EMP214 |
Excelics Semiconductor |
12.50- 15.50 GHz Power Amplifier MMIC | |
8 | EMP215 |
Excelics Semiconductor |
12.5 - 16.5 GHz Power Amplifier MMIC | |
9 | EMP216 |
Excelics Semiconductor |
6 - 18 GHz 2 Watt Power Amplifier MMIC | |
10 | EMP201 |
Excelics Semiconductor |
17.5 - 21.0 GHz Power Ammplifier MMIC | |
11 | EMP201 |
Excelics Semiconductor |
17.5 - 21.0 GHz Power Ammplifier MMIC | |
12 | EMP202 |
EMPIA Technology |
Single-Chip Dual-Channel AC97 Audio Codec |