EMC04N08E - Excelliance MOS

EMC04N08E MOSFET

EMC04N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 75V D RDSON (MAX.) 4.3mΩ ID 163A G UIS, Rg 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1.

Features

EMC04N08E ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 60V, VGS = 0V VDS = 50V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 50A VDS = 5V, ID = 50A DYNAMIC 75 V 2.0 3.0 4.0 ±100 nA 1.