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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 62mΩ ID ‐17A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC.
) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐48V, VGS = 0V VDS = ‐40V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐4.5V VGS = ‐10V, ID = ‐15A VGS = ‐4.5V, ID = ‐7A VDS = ‐5V, ID = ‐15A DYNAMIC ‐60 V ‐1.0 ‐1.8 ‐3.0 ±100 nA ‐1 A ‐25 ‐17 A 55 62 mΩ 75 90 12 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMB40A03K |
Excelliance MOS |
MOSFET |
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| 2 | EMB40A06S |
Excelliance MOS |
MOSFET |
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| 3 | EMB4 |
Rohm |
Dual Digital Transistors |
|
| 4 | EMB4 |
JCET |
Dual Digital Transistors |
|
| 5 | EMB4 |
Jin Yu Semiconductor |
General purpose transistors |
|
| 6 | EMB44P04A |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | EMB44P04Q |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | EMB45A06G |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | EMB45N06A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMB45N06G |
Excelliance MOS |
MOSFET |
|
| 11 | EMB45P03A |
Excelliance MOS |
MOSFET |
|
| 12 | EMB45P03G |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|