EMB32C03V - Excelliance MOS

EMB32C03V N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH P-CH BVDSS 30V -30V RDSON (MAX.) @VGS=10V 32mΩ 55mΩ RDSON (MAX.) @VGS=4.5V 45mΩ 85mΩ ID@TA=25°C 6A -5A N+P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST C.

Features

C / W when mounted on a 1 in2 pad of 2 oz copper. 2019/7/31 TYPICAL MAXIMUM 7.5 55 UNIT °C / W p.1 EMB32C03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VGS = 0V, ID = -250A VDS = VGS, ID = 250A VDS = VGS, ID = -250A N-CH 30 P-CH -30 V N-CH.