EMB28P06V - Excelliance MOS

EMB28P06V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 25mΩ 33mΩ -33A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 TC = 100 °C TA = 2.

Features

XIMUM Junction-to-Case RθJC 3 Junction-to-Ambient3 RθJA 60 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1％ 360°C / W when mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W W ℃ UNIT °C / W 2020/11/12 P.1 A.2 EMB28P06V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transcond.