EMB20P03VAT-L - Excelliance MOS

EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A G Single P Channel MOSFET Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Bottom View S D D S D G D D PIN 1.

Features

Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, ID = -250A VDS = VGS, ID .