EMB18A04VB - Excelliance MOS

EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuo.

Features

▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q1 ▪100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q2 ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Q1 Q2 Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 360°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test 5.2 5.2 40 40 60 60 2022/10/31 UNIT V A mJ W W °C UNIT °C/W P.1 EMB18A04VB ▪Q1_ELECTRICA.