EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 60A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Curren.
t rating is package limited. UNIT V A mJ W °C UNIT °C / W 2017/3/23 p.1 EMB08N06CS ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMB08N06A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | EMB08N06H |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | EMB08N06VS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | EMB08N03A |
Excelliance MOS |
MOSFET | |
5 | EMB08N03V |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | EMB08K04G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | EMB08K04HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | EMB02K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | EMB02N03HR |
Excelliance MOS |
MOSFET | |
10 | EMB02N03HS |
Excelliance MOS |
MOSFET | |
11 | EMB02N60AB |
Excelliance MOS |
MOSFET | |
12 | EMB02N60CSB |
Excelliance MOS |
MOSFET |