EMB05N10H - Excelliance MOS

EMB05N10H Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 5.5mΩ 7.5mΩ ID @TC=25℃ 122.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C T.

Features

bient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/8/4 A.1 EMB05N10H LIMITS ±20 122 77 16 13 196 36 64.8 32.4 138.9 55.6 2.5 1.6 -55 to 150 UNIT V A mJ W W °C MAXIMUM 0.9 50 UNIT °C/W P.1 EMB05N10H ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Sourc.