EMB03N06HS - Excelliance MOS

EMB03N06HS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.0mΩ 4.5mΩ ID @TC=25℃ 166A ID @TA=25℃ 22A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC = 1.

Features

3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/7/10 A.1 EMB03N06HS LIMITS ±20 166 104 22 17 269 65 211.3 105.6 138.9 55.6 2.5 1.6 -55 to 150 UNIT V A mJ W W °C MAXIMUM 0.9 50 UNIT °C/W P.1 EMB03N06HS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Sour.