EM68B16DVAA - Etron Technology

EM68B16DVAA 32M x 16 Mobile DDR Synchronous DRAM

EtronTech EM68B16DVAA 32M x 16 Mobile DDR Synchronous DRAM (SDRAM) Etron Confidential Advanced (Rev. 1.0 Mar. /2009) Features • Fast clock rate: 166/133 MHz • Differential Clock CK & CK • Bi-directional DQS • Four internal banks, 8M x 16-bit for each bank • Edge-aligned with read data, centered in write data • Programmable Mode and Extended Mode Registe.

Features

• Fast clock rate: 166/133 MHz
• Differential Clock CK & CK
• Bi-directional DQS
• Four internal banks, 8M x 16-bit for each bank
• Edge-aligned with read data, centered in write data
• Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, 8, or 16 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength)
• Individual byte writes mask control
• DM Write Latency = 0
• Precharge Standby Current = 300 µA
• Self Refresh Current = 700 µA
• Deep power-down Current = 10 µA ma.