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Excelics • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE(25% TYPICAL) +39dBm TYPICAL P1dB OUTPUT POWER 6.5dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET ELECTRICAL CHARACTERISTIC.
5 V V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg www.DataSheet4U.com Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 720mA 38dBm 175oC -65/175oC 60W 8V -3V 6240mA 120mA @ 3dB Compression 150oC -65/150oC 50W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EIA1314A-2P |
Excelics Semiconductor |
13.0-14.5GHz 2W Internally Matched Power FET |
|
| 2 | EIA1314A-4P |
Excelics Semiconductor |
13.0-14.5GHz 4W Internally Matched Power FET |
|
| 3 | EIA1314-2P |
Excelics Semiconductor |
13.75-14.5 GHz 2-W Internally Matched Power FET |
|
| 4 | EIA1314-4P |
Excelics Semiconductor |
13.75-14.5 GHz 4W Internally Matched Power FET |
|
| 5 | EIA1314-8P |
Excelics Semiconductor |
13.75-14.5GHz 8W Internally Matched Power FET |
|
| 6 | EIA1011-2P |
Excelics Semiconductor |
2W Internally Matched Power FET |
|
| 7 | EIA1011-4P |
Excelics Semiconductor |
10.7-11.7GHz 4W Internally Matched Power FET |
|
| 8 | EIA1111 |
Johanson Technology |
High Power Capacitors (S42E Silver Series) Specification |
|
| 9 | EIA1111-2 |
Excelics Semiconductor |
11.0-11.5 GHz 2-Watt Internally Matched Power FET |
|
| 10 | EIA1111-6 |
Excelics Semiconductor |
11.0-11.5 GHz 6-Watt Internally Matched Power FET |
|
| 11 | EIA1114-2 |
Excelics Semiconductor |
11.0-14.0 GHz 2-Watt Internally Matched Power FET |
|
| 12 | EIA1114-4 |
Excelics Semiconductor |
11.0-14.0 GHz 4-Watt Internally Matched Power FET |
|