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EGN21A090IV - ETC

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EGN21A090IV High Voltage - High Power GaN-HEMT

The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and ot.

Features

High Voltage Operation : VDS=50V High Gain: 15dB(typ.) at Pout=42dBm(Avg.) High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability EGN21A090IV High Voltage - High Power GaN-HEMT DESCRIPTION The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and.

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