3A Avg. 30 Volts SBD EC30HA03L INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS. VOLTAGE EC30HA03L Tj=25°C Tj=150°C 0.2 0.4 0.6 INSTANTANEOUS FORWARD VOLTAGE (V) 0.8 AVERAGE FORWARD POWER DISSIPATION (W) 0° 180° θ CONDUCTION ANGLE 2.4 2.0 1.6 1.2 0.8 0.4 0 0 AVERAGE FORWARD POWER DI.
0.5 5 10 15 20 25 30 35 REVERSE VOLTAGE (V) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) 0° 180° θ CONDUCTION ANGLE 5 D.C. AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE VRM=30V EC30HA03L 4 RECT 180° 3 HALF SINE WAVE RECT 120° 2 RECT 60° AVERAGE FORWARD CURRENT (A) 1 0 0 25 50 75 100 125 150 LEAD TEMPERATURE (°C) 70 60 50 40 30 20 10 0 0.02 SURGE CURRENT RATINGS f=50Hz,Half Sine Wave,Non-Repetitive,No Load EC30HA03L 0.02s 0.05 I FSM 0.1 0.2 TIME (s) 0.5 1 2 JUNCTION CAPACITANCE (pF) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE 1000 Tj=25°C,Vm=20mVRMS, f=100kHz, Typical Valu.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EC30HA04 |
Kyocera |
Schottky Barrier Diode | |
2 | EC30HA04 |
Nihon Inter Electronics |
SBD | |
3 | EC30LA02 |
Nihon Inter Electronics |
SBD | |
4 | EC30LB02 |
Nihon Inter Electronics |
SBD | |
5 | EC30QSA035 |
Kyocera |
Schottky Barrier Diode | |
6 | EC30QSA035 |
Nihon Inter Electronics |
SBD | |
7 | EC30QSA045 |
Kyocera |
Schottky Barrier Diode | |
8 | EC30QSA045 |
Nihon Inter Electronics |
SBD | |
9 | EC30QSA065 |
Kyocera |
Schottky Barrier Diode | |
10 | EC30QSA065 |
Nihon Inter Electronics |
SBD | |
11 | EC3101C |
Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications | |
12 | EC3101C |
Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications |