EAB450M12XM3 - Wolfspeed

EAB450M12XM3 Half-Bridge Module

EAB450M12XM3 VDS 1200 V 5 4 IDS 3 450 A 2 1 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction-Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Basep.

Features

• High Power Density Footprint
• High Junction Temperature (175 °C) Operation
• Low Inductance (6.7 nH) Design
• Implements Conduction-Optimized Third Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate
• 1200 V Drain-Source Voltage C V+ V+ G1 K1 G2 K2 V- Mid NTC1 -t° NTC2 Applications
• Motor Drives and Traction Drives
• Vehicle Fast Chargers
• Automotive Test Equipment System Benefits 3 8,9
• Terminal layout allows for direct bus bar connection wBithout bends or bushings inductance design. enab4ling 5 a simple, low 1
• Isolated, integrated temp.