E50A2CBR - KEC

E50A2CBR STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Sto.

Features

Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range IF(AV) IFSM VRRM Tj Tstg RATING 50 380 (60Hz) 200 -40 215 -40 215 UNIT A A V E50A2CBS, E50A2CBR STACK SILICON DIFFUSED DIODE A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4+_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ .