E4M0025075J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 750V SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances .
Package
• 750V SiC MOSFET technology
Tab
• Optimized package with separate driver source pin
Drain
• 4.7mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
•
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
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Drain (TAB)
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching fre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | E40-G3 |
Mullard |
Oscillograph Tube | |
2 | E400 |
Siliconix |
dual n-channel JFET | |
3 | E4000TC25C |
IXYS |
High Power Sonic FRD | |
4 | E401 |
Siliconix |
dual n-channel JFET | |
5 | E402 |
Siliconix |
dual n-channel JFET | |
6 | E40561 |
TOYO LED ELECTRONICS |
Four Digits Displays | |
7 | E406 |
Philips |
Miniwatt | |
8 | E408 |
Philips |
Miniwatt | |
9 | E408N |
Philips |
Miniwatt | |
10 | E409 |
Philips |
Miniwatt | |
11 | E41-B4 |
Mullard |
Oscillograph Tube | |
12 | E41-G4 |
Mullard |
Oscillograph Tube |