E420 - Siliconix

E420 dual n-channel JFET

matched dual n-channel JFETs designed for • • • • VHF/UHF Amplifiers H Performance Curves NZF See Section 4 BENEFITS • High Gain gfs = 4500 j.Lmho Minimum • Dual Version of E300 with Matched Gate-to-Source Voltage ABSOLUTE MAXIMUM RATINGS (25°C) Gate-To-Gate Voltage .......... ±50 V Gate·Drain or Gate-Source Voltage -25 V Gat.

Features

Ciss 9 en. Characteristic E420 E421 Unit Min Typ Max Min Typ Max Gate Reverse Current (Note 1) -500 -500 pA Gate-50urce Cutoff Voltage -1 Gate-Source Breakdown Voltage -25 -6 -1 -25 -6 V Saturation Drain Current INote 2) 6 30 6 30 rnA Gate Current (Note 1) -500 -500 pA Common-Source Forward Transconductance Common-Source Output Conductance 4,500 9,000 4,500 200 9,000 J,lmho 200 Common-Source Input Capacitance 3,5 Common-Source Reven;e Transfer Capacitance O.B 3,5 pF 0.8 M 10 A IVG51-VGS21 Differential Gate
·Source Voltage T 10 20 mV Test Conditions VOS-O,VGS--.