E411 - Siliconix

E411 dual n-channel JFET

monolithic dual n-channel JFETs --~ Ilol designed for • • • o - • ~ • Ilol FEY Input Amplifiers Low and Medium Frequency Amplifiers Impedance Converters •• Precision Instrumentation Amplifiers • Comparators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-To-Gate Voltage .......... ±40V Gate-Drain or Gate-Source Voltage -40 V Ga.

Features

S2 04 ~ 60 G2 6 G, 0 3 10 5, D, BOTTOM VIEW t G, US, D, 5, G, ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic -1 lGSS 2 _S VGS{off) T 3 A BVGSS -T 4 I lOSS _C Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage SaturatIOn Dram Current (Note 2) E410 E411 E412 Min Typ M.. Min Typ M.. Min Typ M.. -250 -250 -250 Unit pA Test Conditions VOS'" 0, VGS" -30 V -0.5 -3.5 -0.5 -3.5 -0.5 -3.5 VOS=20V,IO"'lnA V -40 -40 -40 VDS -0, lG '" -1 JlA 0.5 6.0 0.5 6.0 0.5 6.0 mA VDS 20 V, VGS" 0 -5 IG 6 VGS Gate Current .